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Ge is of great interest in MOSFET applications due to its high carrier mobilities. Many research of Ge metaloxide-semiconductor field effect transistor (MOSFET) have been studied to achieve More Moore.... However, its potential of spintronics and flexible electronics have not been researched. We fabricated Ge MOS capacitors (CAPs) under 250°C, and investigated the electrical properties. The MOSCAPs fabricated under 250°C shows typical C-V curves with small hysteresis, and the breakdown voltage is well suppressed. The quality of MOSCAPs fabricated at low temperature is similar to those fabricated at higher temperatures. Density of interface trap (Dit) it is only slightly higher in the upper half of the bandgap. Therefore, Ge has potential to be applied to spintronics and flexible electronics.続きを見る
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Mendeley出力
