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Fabrication processes and electrical characteristics of CoSi_2 gate MOS tunnel structures have been studied. Thin CoSi_2 layers were grown on thin Si0_2 films by molecular beam deposition (MBD). Co an...d Si were simultaneously deposited with a deposition ratio of Co : Si = 1 : 2. The structural and electrical properties of the CoSi_2 layers were investigated by X-ray diffraction and Van der Pauw methods. The CoSi2 phase was observed for samples deposited at a temperature between room temperature and 400 °C. The resistivity of the layers deposited at 400 °C was close to the value of CoSi2 and did not depend on the thickness of the layers between 140 and 440A. I-V characteristics for the CoSi2-Si02-Si MOS structures were also investigated. For samples deposited under 200 °C, the leak current was very larger, and Fowler-Nordheim tunnel current was not observed. On the other hand, for samples deposited above 300 °C, Fowler-Nordheim tunnel current was observed. The values of the barrier height for the tunneling were estimated as 2.8 eV and 3.0 eV for samples deposited at 300 °C and 400 °C, respectively.続きを見る
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