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This paper discusses the importance of accurately modeling the gate-source parasitic capacitance of semiconductor devices to estimate the switching losses required to optimize heat dissipation compone...nts. We focus on the gate-source voltage dependence of gate-source capacitance, which has not received much attention in the past, and measure for the first time its characteristics at high drain voltages. The proposed measurement method revealed a significant difference in characteristics with and without drain voltage. By applying the model incorporating this new knowledge to SPICE simulations, we succeeded in accurately estimating the Turn on switching losses and verified the effectiveness of the proposed method.続きを見る
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Mendeley出力
