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The behavior under overvoltage stress was compared between clamped inductive switching (CIS) and unclamped inductive switching (UIS) in Ohmic p-Gate GaN-HEMTs. In both cases, failure causes hole curre...nt to flow from the drain to the substrate. However, the changes in drain voltage at failure, peak voltage shift under repeated stress, and drainsource capacitance shift showed opposite trends. These differences between CIS and UIS are attributed to the distinct effects of electron and hole traps on electric field concentration at the drain electrode edge. However, regardless of the trap polarity, impact ionization at the drain electrode edge destructs the drain–substrate heterostructure, and thus current always flows between them at failure.続きを見る
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Mendeley出力
