| 作成者 |
|
|
|
| 本文言語 |
|
| 出版者 |
|
| 発行日 |
|
| 収録物名 |
|
| 開始ページ |
|
| 終了ページ |
|
| 会議情報 |
|
| 出版タイプ |
|
| アクセス権 |
|
| 権利関係 |
|
| 関連DOI |
|
| 関連DOI |
|
| 関連ISBN |
|
| 関連HDL |
|
| 関連HDL |
|
| 関連情報 |
|
| 概要 |
Unclamped inductive switching (UIS) capabilities of GaN-HEMTs with various substrate bias and p-gate contact conditions were measured. One of the critical disadvantages of GaN-HEMTs is their ultra-low... UIS capability, due to the lack of a structure for removing holes generated by the avalanche breakdown. Therefore, failure location by overvoltage stress strongly depends on the current path of holes generated by avalanche breakdown. This paper reports that UIS capability of ohmic p-gate GaN-HEMTs can be improved by substrate bias through modulation of hole current path. However, Schottky p-gate GaN-HEMTs show no dependence on substrate bias due to low charge-to-breakdown of the gate structure.続きを見る
|
Mendeley出力
