| 作成者 |
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 開始ページ |
|
| 終了ページ |
|
| 会議情報 |
|
| 出版タイプ |
|
| アクセス権 |
|
| Crossref DOI |
|
| 権利関係 |
|
| 権利関係 |
|
| 概要 |
This paper presents the design and validation of a capacitorless low-dropout regulator (LDO) using 180nm CMOS technology, targeting low power consumption, high power supply rejection ratio (PSRR), and... stability for system- on-chip (SoC) applications. Unlike traditional LDOs, which rely on bulky external capacitors, this design eliminates them, reducing size and cost. Key components include a bandgap voltage reference (BGR), startup circuit, error amplifier, and power core, all meticulously designed and simulated. The integrated LDO exhibited excellent performance: a low quiescent current of 78.9μA, near-zero shutdown current, superior line, load regulation, and a PSRR of -61dB at 100kHz. Power gating further reduced idle power consumption. Extensive simulations validated the design’s efficiency and stability, making it suitable for portable, low-power applications. This work addresses conventional LDO limitations and lays the foundation for future capacitorless LDO designs, promoting more compact and efficient power management solutions.続きを見る
|