作成者 |
|
|
|
本文言語 |
|
出版者 |
|
|
発行日 |
|
収録物名 |
|
巻 |
|
号 |
|
開始ページ |
|
終了ページ |
|
出版タイプ |
|
アクセス権 |
|
JaLC DOI |
|
関連DOI |
|
関連URI |
|
関連情報 |
|
概要 |
Characteristics of ultra short channel length recessed channel n-MOSFETs on a p on p^+ epitaxial layer (RC epi-MOSFET) were simulated using the two dimensional device simulator MEDICI. The simulated r...ecessed channel (RC) structure consists of thicker source/drain, zero source/drain junction depth and a lightly doped channel layer. Conventional short channel planar MOSFETs and RC-MOSFETs with uniformly doped substrate were also simulated for performance comparison. High field simulations were carried out using carrier energy balance equations while the single carrier drift-diffusion set of equations was used for low field simulations. Simulation results showed that the RC epi- structure has suppressed threshold voltage roll-off and lower subthreshold swing compared with planar and RC-MOSFETs with uniform substrate doping, without significant reduction in on-state current.続きを見る
|