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| Abstract |
In this work, Laser-induced surface doping technique was applied to singlecrystalline diamond substrate. ArF excimer laser with a wavelength of 193 nm and pulse duration of 20 ns was employed and irra...diated upon immersed substrate in Phosphoric acid that acts as a dopant source. Surface resistivity gradually decreased with increasing laser fluence and number of pulsed laser irradiation. Furthermore, Conductivity enhanced with increasing temperature, which implies that the surface layer generated by irradiation is semiconducting. Depth profile was measured by secondary ion mass spectrometry. results confirmed the incorporation of phosphorus atoms up to 30 nm depths from the surface. Results are promising as a new method for doping of single crystalline diamond. However, the mechanism of the phosphorus incorporation requires more considerations.show more
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