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Downflow etching of Si was studied using a microwave-excited discharge plasma of Ar/CF_4 mixtures under conditions that would produce less plasma-damage than that in our previous experiments [M. Tsuji... et al., Jpn. J. Appl Phys., 38, 6470 (1999)]. A long distance between the center of discharge and the substrate (20cm) was used in order to reduce plasma-damage of the Si surface. The maximum etching rate was about 700Å/min at a microwave power of 80W, an Ar flow rate of 2500 sccm, and a CF_4 flow rate of 300 sccm. A thin C_mF_n polymer was deposited along the edges of etched region at high CF_4 flow rates above about 100 sccm. It was characterized using a XPS.続きを見る
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Mendeley出力
KJ00004507947