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We have developed a rational method to improve electrical characteristics of oxide nanowire field-effect transistors (FET) performance using self-assembled monolayer (SAM) modification. Octadecylphosp...honic acid (ODPA) was utilized as the SAM because of its chemical reaction with oxide surface which removes -OH groups from the channel surface of FETs. The long alkyl chain of ODPA SAM is also effective to prevent adsorption of H_2O molecules on oxide nanowire surfaces. By utilizing ODPA SAM modification, the drain current versus gate voltage characteristics of back-gate hydrothermally grown ZnO nanowire FETs are improved: reduction of hysteresis in vacuum condition and improved switching characteristics in atmospheric condition. Present results could be useful to achieve stable characteristics of oxide-based nanowire FETs.続きを見る
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Mendeley出力
