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We carried out theoretical analyses based on ab initio calculations in which free energy of the vapor phase is incorporated to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The fea...sibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)β2 surface in our previous work [Y. Kangawa, et al., Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.続きを見る
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