<紀要論文>
Numerical Simulation on Asymmetrical Interface of Floating Zone (FZ) for Silicon Crystal Growth

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概要 A three-dimensional global heat transfer model has been developed to describe the floating zone of silicon singlecrystal growth. The calculations of argon gas flow, feed rod, silicon melt and crystal ...are carried out using open-source software OpenFOAM. In order to investigate the asymmetrical phenomena during the growth process, no assumption of axis-symmetric has been made. Three-dimensional electromagnetic field has been calculated. It is confirmed that solid-liquid interface is not symmetric. From the calculation results, it is concluded that asymmetric melt flow and asymmetric interface under the current supplier are caused by the asymmetric inductor.続きを見る

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登録日 2018.10.09
更新日 2023.11.20

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