| 作成者 |
|
|
|
|
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
|
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 開始ページ |
|
| 終了ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| JaLC DOI |
|
| 概要 |
A three-dimensional global heat transfer model has been developed to describe the floating zone of silicon singlecrystal growth. The calculations of argon gas flow, feed rod, silicon melt and crystal ...are carried out using open-source software OpenFOAM. In order to investigate the asymmetrical phenomena during the growth process, no assumption of axis-symmetric has been made. Three-dimensional electromagnetic field has been calculated. It is confirmed that solid-liquid interface is not symmetric. From the calculation results, it is concluded that asymmetric melt flow and asymmetric interface under the current supplier are caused by the asymmetric inductor.続きを見る
|
Mendeley出力
