| 作成者 |
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
|
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 号 |
|
| 開始ページ |
|
| 終了ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| JaLC DOI |
|
| 関連DOI |
|
|
|
|
|
|
|
| 関連URI |
|
|
|
|
|
|
|
| 関連情報 |
|
|
|
|
|
|
|
| 概要 |
Silicon dioxide (SiO2) films were deposited by afterglow-plasma-enhanced CVD using triethoxysilane (TRIES) and tetraethoxysilane (TEOS) as source materials. TRIES has approximately four times higher v...apor pressure than TEOS. The growth rate using TRIES was approximately twice as high as that using TEOS under the same operating conditions. The step coverage of film grown by TRIES was better than that by TEOS under a wide range of operating conditions. These results suggest that TRIES is a good candidate for SiO2 films.続きを見る
|
Mendeley出力
