| 作成者 |
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
|
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 号 |
|
| 開始ページ |
|
| 終了ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| JaLC DOI |
|
| 関連DOI |
|
|
|
|
|
|
|
| 関連URI |
|
|
|
|
|
|
|
| 関連情報 |
|
|
|
|
|
|
|
| 概要 |
Diamond thin films were grown on diamond (100) substrates in an oxygen atmosphere by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of $5\times 10^{-1}$ Torr c...an etch the ${\rm sp}^2$ bonding fractions preferentially. At a substrate temperature less than 400$^circ$C, amorphous carbon thin films, which showed typical G and D peaks in Raman spectrum, were grown. At the range between 450$^circ$C and 650$^circ$C, single phase diamond films consisting of diamond crystal with 1$sim$2$mu$m diameters were grown. The results demonstrated that the oxygen pressure and the substrate temperature are determinant parameters in the growth of diamond by PLD.続きを見る
|
Mendeley出力
