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Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O) and related compounds produced by reactions at high temperat...ures. To study the generation and accumulation of C during the melting process, a transient global model was developed including coupled O and C transport. The enthalpy method for phase change problem was introduced to investigate the melting process. Transport phenomena of C, O and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that contamination with C is activated once the melting front contacts the argon gas. The results indicate that C accumulated during the melting process. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be taken into account.続きを見る
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