Mendeley出力
＜紀要論文＞
Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions
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| 概要 | Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the ...damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.続きを見る |
詳細
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| 登録日 | 2015.08.24 |
| 更新日 | 2020.12.23 |