作成者 |
|
|
|
|
|
|
|
|
本文言語 |
|
出版者 |
|
|
発行日 |
|
収録物名 |
|
巻 |
|
号 |
|
開始ページ |
|
終了ページ |
|
出版タイプ |
|
アクセス権 |
|
JaLC DOI |
|
関連情報 |
|
概要 |
Displacement effects induced by low-energy ion irradiation in silicon have been investigated theoretically. Instantaneous energy of an incident ion during its slowing-down process has been obtained as... a function of the penetration depth and the ordinal number of displacement collisions by solving a set of integral equations. From these results, the averaged penetration depth as a function of the ordinal number of displacement collisions is estimated. The mean free path of the incident ion at a specific depth in silicon is also estimated for several initial energy values and ion species. The energy transfer rate into atomic displacement collisions and the density of deposited energy in a collision cascade have been evaluated considering the primary knock-on process. The damaged layer thickness obtained by the experiment of the ion-bombardment-enhanced selective etching of silicon crystals shows a good agreement with the depth where the estimated density of deposited energy takes a constant value.続きを見る
|