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This paper describes low-power and high-speed RTD/HEMT (Resonant Tunneling Diode
High-Electron Mobility Transistor) logic circuits. In order to estimate RTD/HEMT logic gates using ordinary GaAs/A1GaAs ...HEMT in detail by using real device parameters extracted from measured values, we have examined their characteristics. Fundamental characteristics of logic gates are examined and compared with resistor-load and depletion-mode HEMT (D-HEMT) load inverters. The results show that RTD/HEMT inverter is the fastest among them. Their application to functional circuits such as phase comparator (PC) and voltage controlled oscillator(VCO) used in PLL are also described.続きを見る
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Mendeley出力
