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Metallization and Metal-Semiconductor Interfaces

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概要 This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany fro...m 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.続きを見る
目次 to Metallization and Metal-Semiconductor Interfaces
GENERAL SCHOTTKY BARRIER MECHANISMS
Mechanisms of Barrier Formation in Schottky Contacts
The Role of Defects and Metal States at the Metal-Semiconc uctor Interface
Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11)
DEFECTS AT METAL-SEMICONDUCTOR CONTACTS
Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride
Deep Levels and Band Bending at Metal-Semiconductor Interfaces
Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals
?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping
TEMPERATURE DEPENDENT METALLIZATION STUDIES
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces
Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States
Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb
SILICON-SILICIDE INTERFACES
Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces
Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces
Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes
BAND OFFSETS AND BARRIERS
Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities
Screening Near Semiconductor Heterojunctions and Valence Band Offsets
METALLIZATION REVIEW
The Theory of Schottky Barriers: Controversy or Consensus?
Metallization of Semiconductor Surfaces as a Function of Coverages
APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTOR INTERFACES
Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy
Initial Stages of Metal-Semiconductor Interface Formation
Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers
ALKALI METALS-SEMICONDUCTORS INTERFACES
Metallization of Metal-Semiconductor Interfaces
Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces
Alkali-Metal Overlayers on Silicon Surfaces
Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1
Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces
Influence of Overlayer Metallization on Schottky-Barrier Formation
On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10)
A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface
Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces
Adsorption of Cs on Hydrogenated W(110) Surfaces
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登録日 2020.06.27
更新日 2020.06.28