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| 概要 |
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried out to investigate diffusion mechanism and coefficients of vacancy and self-interstitial atoms. Pre...ssure dependence of diffusion coefficients of the point defects is not significant, although temperature dependence is remarkably large. Large deformation of lattice was observed in an interstitial case, while small lattice distortion was obtained in a vacancy case.続きを見る
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Mendeley出力
KJ00004507908