<紀要論文>
SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy

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概要 The bound-free SiCl_4+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) emissions resulting from the He (2^3S), Ne (^3P_<2,0>)/SiCl_4 Penning ionization and Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction have been obse...rved in the rare gas flowing afterglows. A comparison of the observed spectral features with those in a reported electron-impact spectrum suggested that SiCl_4^+(C) is formed through a vertical Franck-Condon type process in the He (2^3S), Ne (^3P_<0,2>)/SiCl_4 Penning ionization, while the Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction preferentially populates near-resonant highly vibrationally excited levels with small Franck-Condon factors for ionization.続きを見る

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登録日 2009.04.22
更新日 2017.05.10