<紀要論文>
チョクラルスキー法によるすずの結晶成長実験

作成者
本文言語
出版者
発行日
雑誌名
開始ページ
終了ページ
出版タイプ
アクセス権
JaLC DOI
概要 The semiconducting materials such as silicon and gallium arsenide have been widely employed for manufacturing integrated circuits. The crystallization process has been established as a Czochralski pro...cess but its operating procedure and a crystal rod pulling process have not been totally clarified. Herein we report the solidification results of tin from molten metal in a miniature Czochralski crystallization apparatus. The most important factor to get a crystal rod was found to control the molten temperature at an appropriate value. As a result, we got a tin rod of 19mm diameter, 109mm long and 121g weight.続きを見る

本文情報を非表示

KJ00004507679 pdf 873 KB 850  

詳細

レコードID
査読有無
関連情報
ISSN
NCID
タイプ
登録日 2009.04.22
更新日 2017.05.10