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エキシマーレーザーCVD法による絶縁酸化膜の高速成膜

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概要 Excimer-laser-induced CVD methods have been used for the fabrication of SiO_2 and Ta_2O_5 thin films at low substrate temperatures. SiO_2 films were grown by direct oxidation of a Si substrate using A...rF laser photolysis of N_2O and by ArF laser photolysis of SiH_4/N_2O mixtures below substrate temperatures of 500℃. Ta_2O_5 films were grown by ArF laser photolysis of Ta (OC_2H_5)_5/N_2O or O_2 mixtures at substrate temperatures of 200-230℃. The optimum deposition conditions were examined by measuring the film thickness as functions of the substrate temperature, the deposition time, the gas pressure, and the flow rate. The mechanism of film growth was discussed.続きを見る

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登録日 2009.04.22
更新日 2017.03.28