<紀要論文>
溶解シリコンのチョクラルスキー混合対流の数値計算

作成者
本文言語
出版者
発行日
収録物名
開始ページ
終了ページ
出版タイプ
アクセス権
JaLC DOI
概要 The semiconducting materials such as metalic silicon and gallium arsenide are processed in a crucible at high temperature. Melted material convects under a gravitational field. In Czochralski method, ...the crystal silicon is pulled up with a rotation in order to keep the uniformity of the crystal component. The melted metal receives both the buoyant and the rotational centrifugal force. The resulted convection pattern depends on the combination of the parameters such as the Reynolds number, the Grashof number and the Prantl number. A stable computational code was developed and sample computations were carried out for three different values in dimensionless parameter of Gr/Re^2. Three different flow modes were found to be stable depending on this dimensionless parameter.続きを見る

本文情報を非表示

KJ00004507503 pdf 354 KB 100  

詳細

レコードID
査読有無
関連情報
ISSN
NCID
タイプ
登録日 2009.04.22
更新日 2017.03.22