| 作成者 |
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
|
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 開始ページ |
|
| 終了ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| 関連DOI |
|
|
|
| 関連URI |
|
|
|
| 関連情報 |
|
|
|
| 概要 |
We studied the stacking sequence of graphite films formed by the thermal decomposition of a vicinal (titled 4℃ toward the [1120] direction) 6H-Si (0001) substrate surface. Thin (typically three layers...) graphite films grown by annealing at 1400℃ or 1500℃ showed clear low-energy election diffraction (LEED) patterns with threefold rotational symmetry. This indicates that one of two equivalent domains of graphite films formed after annealing at 1900℃ exhibited Bernal (AB…) stacking preferentially. On the other hand, a sixfold rotational symmetry was found on the flat (not inclined) sample surface after annealing at 1400℃due to mixed rotational domains and various graphite thicknesses. These results show that better-quality graphite films were achieved on the vicinal surface than on the flat surface.続きを見る
|
Mendeley出力
