<学術雑誌論文>
Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface

作成者
本文言語
出版者
発行日
収録物名
開始ページ
出版タイプ
アクセス権
権利関係
権利関係
関連DOI
関連HDL
概要 Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin–orbit interactions. We performed Sn intercalation into the graphene/SiC(0001)... interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn–Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at K^^- and M^^- points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.続きを見る

本文ファイル

pdf 7402694 pdf 2.38 MB 4  

詳細

PISSN
EISSN
NCID
レコードID
タイプ
助成情報
登録日 2026.01.28
更新日 2026.01.29