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Structural defects in the layered compounds (Ta_<1–x>Ti_x)Se_2 (0 ≤ x ≤ 1), characterized by anisotropy in electrical conductivity, have been studied by cross-sectional observation using chemically se...nsitive high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Intercalants were detected in the widest space between Se atoms across the van der Waals (vdW) gap, regardless of the Ti content (except TiSe_2) or thermal history after the crystal growth. Binary TaSe_2 with both 3R and 2H structures includes a high density of stacking faults, while Ti addition stabilizes the 1T structure with no stacking faults. We show that the chemical composition dominates the structural defects in the (Ta_<1–x>Ti_x)Se_2 compounds. Substitution of Ta with Ti acts as a hole addition, which reduces the number of conduction electrons in the layer, while an intercalated atom in the vdW gap may not act as a donor of conduction electrons.続きを見る
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Mendeley出力
