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Trigonal Fe_2Si nanosheets, which are promising candidates for spintronic nanodevices, were synthesized at the Fe/amorphous (a-)SiO_x thin film interface using electron irradiation. The formation of n...anoscale silicide was confirmed at 90 K as well as at 298 K. Such a low-temperature synthesis of Fe_2Si can be attributed to the dissociation of a-SiO_x induced by electronic excitation; Si–O bonds dissociate through Auger decay of core–holes generated by electronic excitation, and then, dissociated Si atoms form Fe–Si bonds. The amount of Fe_2Si formed at room temperature was greater than that at 90 K, suggesting that the atomic migration induced by electronic excitation involves a contribution of thermal energy. The amount of Fe_2Si nanosheets produced indicates that the Si–O bonds are more easily dissociated by electronic excitation in a-SiO_x rather than in a-SiO_2. Formation of the Fe_2Si nanosheets found in this study differs from the formation of an equiatomic FeSi phase predicted by thermodynamic models assuming diffusion at a planar Fe/Si interface. We propose a versatile route to selectively form metal silicide nanosheets in an electron irradiated area at temperatures below room temperature.続きを見る
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