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An experimental method has been demonstrated to evaluate dislocations in 4H-SiC crystals that affect the performance of industrially important power devices. Using high-voltage electron microscopy wit...h 1 MeV electrons, it is possible to visualize dislocations contained in a 5 μm-thick crystal with a spatial resolution of ∼ 10 nm. This method has a 10∧3 times better spatial resolution than currently existing characterization methods for crystalline defects in semiconductor wafers. Scanning transmission electron microscopy (STEM) is suitable for imaging thick specimens than transmission electron microscopy (TEM) in respect of image blurring due to chromatic aberration caused by inelastic scattering of electrons with increasing specimen thickness. With the proposed method, the maximum observable specimen thickness was determined to be 8.6 μm for STEM and 5.4 μm for TEM.続きを見る
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Mendeley出力
Materials Letters 402_2026_139310