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We show electrical properties of a Ge-based top-gate metal-oxide-semiconductor field-effect transistor (MOSFET) structure with epitaxial ferromagnetic Heusler alloy/Ge Schottky-tunnel contacts, fabrica...ted with a low-temperature gate-stack process. For shaping the Ge-MOSFET with the ferromagnetic source and drain (S/D) contacts, we use a combination process of Ar^+ ion milling and reactive ion etching (RIE). As a consequence of the formation of a gate stack (SiO_2/GeO_2) using a process temperature of 240 °C, we demonstrate inversion channel MOSFETs with a low gate-voltage operation (V_G ∼5 V). Furthermore, we achieve a relatively high field-effect mobility (_<μFE>) of ∼300 cm^2/Vs compared to those in a Si-based back-gate spin-MOSFET reported previously [Phys. Rev. B 102, 035305 (2020).]. This study will open a way for developing a Ge-based top-gate spin-MOSFET on the Si platform.続きを見る
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Mendeley出力
