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A W-shaped type-II AlAs/Al_<0.3>In_<0.7>As /GaA_s_<0.1>Sb_<0.9> lasing nanoscale heterostructure is designed for near infrared emission. The Luttinger kohn 6*6 model is used to compute wavefunctions, ...dispersion, matrix elements and then optical gain. The calculated optical gain for x polarization of light is found under variable well widths. For injected carrier concentration of 2.5×10^<12> /cm^2, gain of 12560/cm is attained at a wavelength of 1550 nm for 2 nm quantum well width. Such a structure can be regarded as new because of its high optical gain with low attenuation at 1550 nm, which makes it useful for optoelectronics.続きを見る
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Mendeley出力
p1882-1891