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The purpose of this paper is to explore the possibility for enhancing the performance of CBTS solar cells by incorporating Al_2O_3 insulating layer (Eg ~7 eV) between CdS buffer layer and CBTS absorbe...r layer. initially, we performed a comparative analysis between Mo/MoS_2/CBTS/CdS/ZnO/AZO/Al and Mo/MoS2/CBTS/ Al_2O_3/CdS/ZnO/AZO/Al using SCAPS-1D. Subsequently, we conducted an investigation into the impact of Al2O3 thickness on cell performance. Our findings indicate that photovoltaic parameters deteriorate with an increase in Al_2O_3 layer thickness, and a thickness of 3nm is sufficient to facilitate the electrons intra-band tunneling. The PCE of the reference cell (without Al_2O_3) is 6.75%. Upon inserting the alumina layer, the device exhibits a PCE of 11.89% with VOC, JSC, and FF equal to 1.08 V, 15.45 mA/cm² and 71.41 % respectively. Although cell efficiency is not fully optimized in this study, we’ve highlighted the significant utility of Al_2O_3 layer in advancing the CBTS solar cells development.続きを見る
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