SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy - Collections

＜departmental bulletin paper＞
SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy

Creator	Author PID K001853 Creator Name Tsuji, Masaharu 辻, 正治ツジ, マサハル Affiliation Affiliation Name Institute of Advanced Material Study, Kyushu University 九州大学機能物質科学研究所
	Creator Name Nakamura, Masafumi 中村, 昌文ナカムラ, マサフミ Affiliation Affiliation Name Department of Molecular Science and Technology, Graduate School of Engineering Sciences, Kyushu University
	Creator Name Mizuguchi, Toshinori 水口, 俊則ミズグチ, トシノリ Affiliation Affiliation Name (Present address)Nippon Steel Corp.
	Creator Name Kaneko, Nobuo 金子, 信男カネコ, ノブオ Affiliation Affiliation Name (Present address) Sanken Electronic Co.
	Author PID L003026 Creator Name Nishimura, Yukio 西村, 幸雄ニシムラ, ユキオ Affiliation Affiliation Name Institute of Advanced Material Study, Kyushu University 九州大学機能物質科学研究所
Language	English
Publisher	九州大学機能物質科学研究所
Publisher	Institute of Advanced Material Study Kyushu University
Date	1995-11-15
Source Title	The reports of Institute of Advanced Material Study Kyushu University
Vol	9
Issue	1
First Page	7
Last Page	12
Publication Type	Version of Record
Access Rights	open access
JaLC DOI	https://doi.org/10.15017/6666
Related DOI	九州大学機能物質科学研究所報告 \|\| 9(1) \|\| p7-12
	The reports of Institute of Advanced Material Study Kyushu University \|\| 9(1) \|\| p7-12
	http://www.cm.kyushu-u.ac.jp/
	http://133.5.181.45/TSUJI/
Related URI	九州大学機能物質科学研究所報告 \|\| 9(1) \|\| p7-12
	The reports of Institute of Advanced Material Study Kyushu University \|\| 9(1) \|\| p7-12
	http://www.cm.kyushu-u.ac.jp/
	http://133.5.181.45/TSUJI/
Relation	九州大学機能物質科学研究所報告 \|\| 9(1) \|\| p7-12
	The reports of Institute of Advanced Material Study Kyushu University \|\| 9(1) \|\| p7-12
	http://www.cm.kyushu-u.ac.jp/
	http://133.5.181.45/TSUJI/
Abstract	The bound-free SiCl_4+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) emissions resulting from the He (2^3S), Ne (^3P_<2,0>)/SiCl_4 Penning ionization and Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction have been obse...rved in the rare gas flowing afterglows. A comparison of the observed spectral features with those in a reported electron-impact spectrum suggested that SiCl_4^+(C) is formed through a vertical Franck-Condon type process in the He (2^3S), Ne (^3P_<0,2>)/SiCl_4 Penning ionization, while the Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction preferentially populates near-resonant highly vibrationally excited levels with small Franck-Condon factors for ionization.show more

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Record ID	6666
Peer-Reviewed	Unrefereed
ISSN	0914-3793
NCID	AN10060378
Type	紀要論文
Type	一般論文
Created Date	2009.04.22
Modified Date	2022.08.19

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＜departmental bulletin paper＞ SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy

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＜departmental bulletin paper＞
SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy