Multilayer Boron Films and Band Gap Transition - Collections | Kyushu University Library

＜departmental bulletin paper＞
Multilayer Boron Films and Band Gap Transition

Creator	Creator Name HOSSAIN, Shahadat Affiliation Affiliation Name Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering, Kyushu University : Graduate Student Affiliation Affiliation Name Bangladesh Atomic Energy Commission
	Creator Name IWAKI, Tensei イワキ, テンセイ Affiliation Affiliation Name Department of Interdisciplinary Engineering Sciences, Interdisciplinary Graduate School of Engineering, Kyushu University : Graduate Student
	Author PID K004856 Creator Name NAKAGAWA, Takeshi 中川, 剛志ナカガワ, タケシ Affiliation Affiliation Name Department of Advanced Materials Science and Engineering, Faculty of Engineering Sciences, Kyushu University
Language	English
Publisher	Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
Publisher	九州大学大学院総合理工学府
Date	2022-09
Source Title	Engineering sciences reports, Kyushu University
Vol	44
Issue	1
First Page	17
Last Page	21
Publication Type	Version of Record
Access Rights	open access
JaLC DOI	https://doi.org/10.15017/4795525
Abstract	We report the growth of multilayer boron films on Mo(112) surface by e-beam deposition. Subsequent annealing after deposition shows ordered structure of c(2×2) for 1st layer, which is consistent with ...an earlier study. Additional deposition of boron atoms revealed no ordered structure for 2nd and 3rd layer as evident from scanning tunneling microscopy and low energy electron diffraction. Scanning tunneling spectroscopy measurements demonstrate the semiconducting nature of the 2nd and 3rd layer with a band gap of 1.2 and 1.4 eV, respectively. On the other hand, 1st layer is metallic. These results show prospects for the practical applications of boron based nanomaterials in the future.show more

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PISSN	1346-7883
NCID	AA1147319X
Record ID	4795525
Subject Terms	Boron
	Mo(112)
	Low energy electron diffraction(LEED)
	Scanning tunneling microscopy(STM)
	Scanning tunneling spectroscopy(STS)
	Band gap
ISSN	1346-7883
NCID	AA1147319X
Funding Information	Funder Name 日本学術振興会 Japan Society for the Promotion of Science Award Number 22K04928 Award Title ホウ素と磁性金属界面の作製とその偏極光電子によるスピン伝導測定
	Funder Name Japan International Cooperation Agency (JICA) 国際協力機構 Award Title "Innovative Asia Initiative" program
	Funder Name Ministry of Education, Culture, Sports, Science and Technology (MEXT) 文部科学省
Created Date	2022.08.04
Modified Date	2022.08.04