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| Abstract |
Transient global modeling of the Czochralski silicon (CZ-Si) crystal growth process is essential for understanding the dynamic behaviors of the heat and mass transport in the crystallization set-up. F...urthermore, segregation of impurities and dopants could also be predicted dynamically by the transient global simulation. The transient global model for the crystal pulling process was developed for CZ-Si growth with the cusp-shaped magnetic field (CMF). The radial and axial homogeneities of oxygen and carbon were investigated for the growing crystal. The oxygen concentration along the axis decreased with the increase of the length of the crystal. Due to the continuous contamination and the lower segregation coefficient, the carbon concentration increased with the increase of the crystal length. The developed transient global model is also applicable for the segregation prediction of other dopants and impurities in CZ-Si growing process.show more
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