| 作成者 |
|
|
|
|
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
|
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 開始ページ |
|
| 終了ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| JaLC DOI |
|
| 概要 |
We carried out theoretical analyses based on ab initio calculations in which free energy of the vapor phase is incorporated to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The fea...sibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)β2 surface in our previous work [Y. Kangawa, et al., Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.続きを見る
|
Mendeley出力
