Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase - Collections

＜journal article＞
Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

Creator	Author PID K003622 Creator Name Itagaki, Naho 板垣, 奈穂イタガキ, ナホ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID L004839 Creator Name Kuwahara, Kazunari クワハラ, カズナリ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID L003871 Creator Name Nakahara, Kenta ナカハラ, ケンタ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID L003748 Creator Name Yamashita, Daisuke ヤマシタ, ダイスケ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID K003618 Creator Name Uchida, Giichiro ウチダ, ギイチロウ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID K000267 Creator Name Koga, Kazunori コガ, カズノリ Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
	Author PID K000264 Creator Name Shiratani, Masaharu シラタニ, マサハル Affiliation Affiliation Name Graduate School of Information Science and Electrical Engineering, Kyushu University
Language	English
Publisher	The Japan Society of Applied Physics
Publisher	応用物理学会
Date	2010-12-16
Source Title	Applied Physics Express
Vol	4
Issue	1
First Page	011101(1)
Last Page	011101(3)
Publication Type	Accepted Manuscript
Access Rights	open access
Rights	(C) 2011 The Japan Society of Applied Physics
Related DOI	isIdenticalTo https://doi.org/10.1143/APEX.4.011101
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Related DOI	Applied Physics Express \|\| 4(1) \|\| p011101(1)-011101(3)
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Related URI	Applied Physics Express \|\| 4(1) \|\| p011101(1)-011101(3)
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Related URI	isIdenticalTo https://apex.jsap.jp/link?APEX/4/011101/
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Relation	Applied Physics Express \|\| 4(1) \|\| p011101(1)-011101(3)
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Abstract	We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfu...lly demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10^<-4> Ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained.show more

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Record ID	25590
Peer-Reviewed	Refereed
Related URI	https://apex.jsap.jp/link?APEX/4/011101/
Subject Terms	Amorphous phase
	AZO films
	Conventional sputtering
	Crystallinities
	Nitrogen atom
	Novel methods
	Optical transmittance
	Solid-phase crystallization
	Wavelength ranges
	ZnO
	ZnO buffer layer
	ZnO films
	Zno: ai
	Buffer layers
	Conductive films
	Crystal growth
	Crystallization
	Zinc oxide
	Amorphous films
ISSN	1882-0778
ISSN	1882-0786
DOI	10.1143/APEX.4.011101
Created Date	2013.01.09
Modified Date	2024.01.10

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＜journal article＞ Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

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＜journal article＞
Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase