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Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

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概要 We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfu...lly demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10^<-4> Ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained.続きを見る

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登録日 2013.01.09
更新日 2024.01.10

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