異なる基板を用いた場合におけるGaN単結晶の転位密度・残留応力の数値解析 - Collections

＜technical report＞
異なる基板を用いた場合におけるGaN単結晶の転位密度・残留応力の数値解析

Creator	Creator Name 中野, 智 Nakano, Satoshi ナカノ, サトシ Affiliation Affiliation Name 九州大学応用力学研究所 Research Institute for Applied Mechanics, Kyushu University
Language	Japanese
Publisher	九州大学応用力学研究所
Publisher	Research Institute for Applied Mechanics, Kyushu University
Date	2016-10
Source Title	Technical reports by technical staffs of Research Institute for Applied Mechanics, Kyushu University
Vol	17
First Page	1
Last Page	7
Publication Type	Version of Record
Access Rights	restricted access
Rights	著作権処理未完了のため本文ファイル非公開
Rights	Public access to the fulltext file is restricted by copyright reason