<departmental bulletin paper>
An effect of dopans on ZnS-based thin film electroluminescence devices

Creator
Language
Publisher
Date
Source Title
Vol
Issue
First Page
Last Page
Publication Type
Access Rights
JaLC DOI
Related DOI
Related URI
Relation
Abstract Thin film electroluminescence (EL) device with double insulating layers was investigated using ZnS-based phosphor doped with various elements. Fabrication of thin insulating layer by ion-plating metho...d improved the breakdown resistance and brightness of EL device as compared with the layer fabricated by electron beam deposition. It was found that calcium and bismuth fluorides emit orange and white phosphor, respectively, in the ZnS-based EL devices. The color of EL could be modified by doping two phosphor centers, such as Tb-Ce and Tb-La, in the ZnS matrix.show more

Hide fulltext details.

pdf p287 pdf 143 KB 472  

Details

Record ID
Peer-Reviewed
Subject Terms
ISSN
NCID
Created Date 2010.06.11
Modified Date 2020.11.27

People who viewed this item also viewed