| Creator |
|
|
|
|
|
|
|
|
|
| Language |
|
| Publisher |
|
|
|
| Date |
|
| Source Title |
|
| Vol |
|
| Issue |
|
| First Page |
|
| Last Page |
|
| Publication Type |
|
| Access Rights |
|
| JaLC DOI |
|
| Related DOI |
|
|
|
|
|
|
|
| Related URI |
|
|
|
|
|
|
|
| Relation |
|
|
|
|
|
|
|
| Abstract |
In order to clarify the process of crystal growth in vapor deposited silicon carbide (SiC), the distribution of grain orientation and grain boundary character of a plate cut from just above a substrat...e and a plate cut in parallel to the growth direction was analyzed by Orientation Imaging Microscopy (OIM). The process of crystal growth in vapor deposited SiC is as follows. The nuclei of $\beta$-SiC with random orientation are deposited on a substrate and subsequent crystal growth occurs, $langle 110 \rangle$ direction as a preferred orientation. Crystals with $Sigma 3$, $Sigma 9$, and $Sigma 27$ boundaries are predominantly observed and two of them, when they get in contact, forms random boundaries. The nuclei of $alpha$-SiC are formed at random boundaries and grow to become $alpha$-SiC crystals as large as 2 mm.show more
|
Export Mendeley
p007