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Relationship between outgoing total heat transfer rate and dislocation density, residual stress in multicrystalline silicon for solar cells

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Abstract Multicrystalline silicon is major materials for solar cells because of cost-effectiveness. The unidirectional Solidification process is an important method for growing multicrystalline silicon ingot f...or solar cells. The requirements for photovoltaic industry are increase the conversion efficiency and yield rate of solar cells. Dislocation density and residual stress are main problems for multicrystalline silicon ingot to improve the quality for solar cells. The multiplication of dislocation and the residual stress in the crystal affect each other during cooling process. Therefore, it is important to control dislocation density and residual stress during the cooling process to get high-quality solar cells. We investigated the influence of outgoing total heat transfer rate on dislocation density and residual stress in multicrystalline silicon using the unidirectional solidification process for solar cells. The results showed that dislocation density and residual stress depend on outgoing total heat transfer rate from the crystal. This phenomenon is due to the change of energy in the crystal.show more

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Created Date 2015.10.06
Modified Date 2023.02.27

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