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＜departmental bulletin paper＞
Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

Creator
Creator Name
Bai, Dong-Ju
Affiliation
Affiliation Name
Department of Electronic Device Engineering : GraduateStudent
Creator Name
Baba, Akiyoshi
馬場, 昭好
ババ, アキヨシ
Affiliation
Affiliation Name
Department of Electronic Device Engineering : Graduate Student
九州大学大学院システム情報科学研究科電子デバイス工学専攻
Creator Name
Kenjo, Atsushi
権丈, 淳
ケンジョウ, アツシ
Affiliation
Affiliation Name
Department of Electronic Device Engineering, Kyushu University
九州大学大学院システム情報科学研究科電子デバイス工学専攻
Creator Name
Sadoh, Taizoh
佐道, 泰造
サドウ, タイゾウ
Creator Alternative Name
Sado, Taizo
Affiliation
Affiliation Name
Department of Electronic Device Engineering, Kyushu University
九州大学大学院システム情報科学研究科電子デバイス工学専攻
Creator Name
Nakashima, Hiroshi
中島, 寛
ナカシマ, ヒロシ
Affiliation
Affiliation Name
Advanced Science and Technology Center for CooperativeResearch, Kyushu University
九州大学先端科学技術共同研究センター
Creator Name
Mori, Hiroshi
モリ, ヒロシ
Affiliation
Affiliation Name
Department of Electrical Engineering and Computer Science,Faculty of Engineering, Kyushu University
Creator Name
Tsurushima, Toshio
鶴島, 稔夫
ツルシマ, トシオ
Affiliation
Affiliation Name
Department of Electronic Device Engineering, Kyushu University
九州大学大学院システム情報科学研究科電子デバイス工学専攻
Language
English
Publisher
九州大学大学院システム情報科学研究科
Graduate School of Information Science and Electrical Engineering, Kyushu University
Date
1997-09-26
Source Title
Research reports on information science and electrical engineering of Kyushu University
Vol
2
Issue
2
First Page
219
Last Page
224
Publication Type
Version of Record
Access Rights
open access
JaLC DOI
https://doi.org/10.15017/1523855
Related DOI
https://portal.isee.kyushu-u.ac.jp/
Related URI
https://portal.isee.kyushu-u.ac.jp/
Relation
https://portal.isee.kyushu-u.ac.jp/
Abstract Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the ...damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.show more

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Details

PISSN
1342-3819
EISSN
2188-0891
NCID
AN10569524
Record ID
1523855
Peer-Reviewed
Refereed
Subject Terms
Energy transport
Deposited energy
Recoil atom
Damaged layer thickness
Created Date 2015.08.24
Modified Date 2020.12.23

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