| Creator |
|
|
|
|
|
| Language |
|
| Publisher |
|
|
|
| Date |
|
| Source Title |
|
| Vol |
|
| Issue |
|
| First Page |
|
| Last Page |
|
| Publication Type |
|
| Access Rights |
|
| JaLC DOI |
|
| Related DOI |
|
| Related URI |
|
| Relation |
|
| Abstract |
A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of... TiO_x with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe_3O_4/ TiO_x/M (M =Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/NiFe bi-layer.show more
|
Export Mendeley
p063