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Electric transport properties have been studied for Fe_3O_4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparab...le to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.続きを見る
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