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We have investigated the effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC). Experiments were performed by using three types of stacked structures, i.e., (a) a-Si/a-Ge/a-...Si/SiO_2, (b) a-Si/a-Ge/SiO_2, and (c) SiO_2/a-Ge/a-Si/SiO_2. These samples were annealed at 600°C. The results for the structure (a) with Ge films of 5 nm, Ge atoms were completely diffused into a-Si regions, and no-enhanced SPC was detected. However, if Ge thickness was increased to 15 nm, Ge atoms were localized. Such phenomena became significant by (b) and- (c) structures even for samples with Ge films of 5 nm. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers, and then propagated into a-Si layer. Therefore, interface nucleation driven SPC becomes possible by using the structures (b) and (c). It is expected that this process can be used to grow oriented Si crystals on SiO_2.続きを見る
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Mendeley出力
