作成者 |
|
|
本文言語 |
|
出版者 |
|
|
発行日 |
|
収録物名 |
|
巻 |
|
号 |
|
開始ページ |
|
終了ページ |
|
出版タイプ |
|
アクセス権 |
|
JaLC DOI |
|
関連DOI |
|
関連URI |
|
関連情報 |
|
概要 |
Quasi-one-dimensional compound KFeS_2 crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a w...eak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.続きを見る
|