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Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N20. The gate voltage shift (AVG) has been used to characterize the c...harge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N20 can reduce AVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N20 is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.show more
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