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| Abstract |
Based on device structure, HEMT DC characteristics are estimated by device simulation. Results show quantative agreement with measured results. To confirm that the device simaltion results can be appl...ied to circuit simulation model, a nonlinear HEMT model recently proposed by Hirose and Watanabe, which employs an improved tanh function nonlinear fitting model has been investigated to prove its usefulness for our design system. The results are fitted by the nonlinear model better than SPICE MESFET model used in our previous work. These results show that HEMT DC characteristics can be estimated from the device simulation without fabrication to some extent.show more
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