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We studied the mechanism of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidifiation process. We investigated the boundary layer thickness of oxygen con...centration near a crucible wall region using FTIR measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated from 3 to 5 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to with that estimated by theoretical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si_3N_4 to the melt during growth process.show more
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